Grant: $99,364 - National Science Foundation - Jun. 10, 2009
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Award Description: This Small Business Innovation Research Project will develop an innovative approach for epitaxial deposition of high quality thick (Al)(In)(Ga)N layers with low dislocation density. Accomplishment of the proposed effort will provide technology for next generation UV LED structures, which currently require improvements in growth of thick and doped AlGaN layers with low density of threading dislocations and point defects. (Al)(In)(Ga)N based deep UV LEDs represent a new class of compact and environmentally stable semiconductor UV light sources. Deep UV LEDs penetrate existing markets that require compact, rugged and environmentally friendly UV radiation sources. This innovative technology is positioned to create new applications that were previously unattainable due to the inherent limitations of existing UV lamps or lasers. Primary markets include water/air disinfection, bio-medical and analytical instrumentation, fluorescence sensing, ink curing, and phototherapy.
Project Description: This projects targets development of novel epitaxial method of growth of thick high-quality AlGaN layers for use in high power deep ultraviolet light emitting diodes. Quaterly activities included: modifications and calibrations of custom-built growth reactor to accomodate for hybrid growth of AlGaN layers with slow and fast growth rates; test runs for epitaxial layer growth using slow growth rate for deposition of high quality buffer layers; preparation of customized templated for subsequent layer growth; and material characterization activities.
Jobs Summary: Senior Scientist; Growth Scientist; Growth Engineer; Processing Engineer; Testing Engineer; Technician (Total jobs reported: 6)
Project Status: More than 50% Completed
This award's data was last updated on Jun. 10, 2009. Help expand these official descriptions using the wiki below.